Photoemission spectroscopy of LiF coated Al and Pt electrodes

Citation
R. Schlaf et al., Photoemission spectroscopy of LiF coated Al and Pt electrodes, J APPL PHYS, 84(12), 1998, pp. 6729-6736
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
84
Issue
12
Year of publication
1998
Pages
6729 - 6736
Database
ISI
SICI code
0021-8979(199812)84:12<6729:PSOLCA>2.0.ZU;2-L
Abstract
Thin lithium fluoride (LiF) interlayers between the low work function elect rode and the electron transport layer in organic light emitting diodes (OLE D) result in improved device performance. We investigated the electronic st ructure of LiF coated Al and Pt electrodes by x-ray photoemission spectrosc opy (XPS) and ultraviolet photoemission spectroscopy (UPS). Thin LiF films were grown in several steps onto Ar+ sputtered Al and Pt foils. After each growth step the surfaces were characterized in situ by XPS and UPS measurem ents. After evaluating band bending, work function and valence band offset for both samples, their band lineups were determined. Our measurements indi cate that despite the insulating character of LiF in both samples, band ben ding is present in the LiF layer. The difference in band bending between th e samples allows the conclusion that the driving force for the development of the band bending results from the contact potential between the metal an d the LiF overlayer. The band bending is most likely caused by a redistribu tion of charged Frenkel or Schottky type defects within the LiF layer. The work function of both samples after LiF deposition was dramatically lowered compared to the values obtained on the clean sputtered metal surfaces. (C) 1998 American Institute of Physics. [S0021-8979(98)01624-7].