Photoluminescence properties of Zn1-xMgxSe on misoriented GaAs substrates by molecular beam epitaxy

We have investigated the photoluminescence (PL) properties of Zn1-xMgxSe ep ilayers grown on GaAs substrates with different misorientation angles by mo lecular beam epitaxy. According to the data measured by PL and by electron- probe microanalysis, the Mg incorporation in the Zn1-xMgxSe epilayer decrea ses with increasing misorientation angle. In addition, the PL spectra showe d that the full width at half maxima of the band-edge excitonic emission an d the intensity of the defect-related donor-acceptor emission in Zn1-xMgxSe epilayers decreased appreciably when a substrate with a misorientation ang le of 15 degrees was used. (C) 1998 American Institute of Physics. [S0021-8 979(98)04824-5].