A self-seeding technique suitable for growing large single crystals of low-
heat-conductivity materials from the melt is developed using industrially i
mportant CdTe and Cd1-xZnxTe crystals as an example. A method of controllin
g crystal composition by maintaining an "undersaturation" excessive partial
pressure of a higher-volatility component over the melt, which was develop
ed for preparing semiconductor materials, is applied to Cd-containing compo
unds for the first time. With these modifications, rather perfect large CdT
e and Cd1-xZnxTe single crystals are grown by the Obreimov-Shubnikov (gradi
ent freeze) method. (C) 1998 Elsevier Science B.V. All rights reserved.