A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy

Authors
Kaiser, U Newcomb, SB Stobbs, WM Adamik, M Fissel, A Richter, W
Citation
U. Kaiser et al., A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy, J MATER RES, 13(12), 1998, pp. 3571-3579
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914 → ACNP
Volume
13
Issue
12
Year of publication
1998
Pages
3571 - 3579
Database
ISI
SICI code
0884-2914(199812)13:12<3571:ATEMIO>2.0.ZU;2-K
Abstract
The effects of different growth parameters on the microstructure of the SIC films formed during simultaneous two-source molecular-beam-epitaxial (MBE) deposition have been investigated. Substrate temperatures as low as 750-90 0 degrees C have been used. The relationship between a number of different growth morphologies and deposition conditions has been established. The for mation of single-crystal 3C films has been found to occur at low growth rat es but within a limited Si:C adatom ratio. A combination of transmission el ectron microscopy (TEM) and atomic force microscopy (AFM) has been used to examine the different films, and the results of these investigations are de scribed.