Characterization of CdTe, Cd0.96Zn0.04 and Zn-diffused CdTe by defect etching

The crystal quality of CdTe, Cd0.96Zn0.04Te and Zn-diffused CdTe slices con taining 1 x 10(22) cm(-3) atoms of zinc at the surface of the slice was inv estigated by the technique of defect etching. In this investigation, the ch emical etch. Inoue EAg-1 reagent, gave satisfactory results, with useful co mparative values of the etch pit density obtained in these materials. The m ain result that was obtained was that the etch pit density in Zn-diffused C dTe was more than in times greater than in undiffused CdTe and that after t he diffused layer had been removed the value was virtually the same as in u ndiffused CdTe. (C) 1998 Kluwer Academic Publishers.