Optical and structural investigations on spray-deposited CdS films

CdS and indium doped CdS thin films have been prepared by the spray pyrolys is method. The optical band gaps of CdS and doped CdS were found to be 2.35 and 2.39 eV, respectively. The carrier concentration of doped CdS, calcula ted from an optical method, was found to be 7.5 x 10(18) cm(-3). The X-ray diffraction (XRD) analysis revealed that the films were polycrystalline and exhibited hexagonal structure. In order to calculate theoretical XRD inten sity values for CdS, the structure factor right perpendicular F-(hkl) left perpendicular(2) was derived. The temperature correction factor was employe d for both Cd and S to correct intensity values. The theoretically calculat ed XRD intensity values of (hkl) coincided with those of experimental value s. (C) 1998 Kluwer Academic Publishers.