Electrodeposition of n-type and p-type ZnSe thin films for applications inlarge area optoelectronic devices

ZnSe layers have been grown by a low temperature (similar to 65 degrees C) electrochemical deposition technique in an aqueous medium. The resulting th in films have been characterized using X-ray diffraction (XRD) and a photoe lectrochemical (PEC) cell for determination of the bulk properties and elec trical conductivity type. XRD patterns indicate the growth of ZnSe layers w ith (1 1 1) as the preferred orientation. PEC studies show p-type semicondu cting properties for the as deposited layers and n-type ZnSe can be produce d by appropriate doping. Annealing at 250 degrees C for 15 min improves the crystallinity of the layers and the photo response of the ZnSe/electrolyte junction. (C) 1998 Kluwer Academic Publishers.