Boron ion particles sputtered from boron films deposited on graphites

Citation
Y. Ohtsuka et al., Boron ion particles sputtered from boron films deposited on graphites, J NUCL MAT, 263, 1998, pp. 735-739
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
JOURNAL OF NUCLEAR MATERIALS
ISSN journal
00223115 → ACNP
Volume
263
Year of publication
1998
Part
A
Pages
735 - 739
Database
ISI
SICI code
0022-3115(199810)263:<735:BIPSFB>2.0.ZU;2-7
Abstract
Boron films were deposited on pyrolytic and isotropic graphites by vapor de position at different deposition rates. The particles sputtered from these films were measured directly by the QMS during 5 keV Dg beam irradiation wi th a flux of 2 x 10(21) D/m(2) s. It was found that the sputtered particles were in the form of boron ion and neutral. The boron ion showed a differen t behavior from the neutral. The ion signal had a peak value at the beginni ng of each shot. It also depended on the conditions of the substrates and t he deposition rate. These dependencies might be associated with the existen ce of oxygen on the surface. (C) 1998 Elsevier Science B.V. All rights rese rved.