Analysis of the R(0)A product and detectivity in a GaInAsSb infrared photovoltaic detector

Authors
Tian, YA Zhou, TM Zhang, BL Jin, YX Jiang, H
Citation
Ya. Tian et al., Analysis of the R(0)A product and detectivity in a GaInAsSb infrared photovoltaic detector, J PHYS D, 31(22), 1998, pp. 3291-3297
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
31
Issue
22
Year of publication
1998
Pages
3291 - 3297
Database
ISI
SICI code
0022-3727(19981121)31:22<3291:AOTRPA>2.0.ZU;2-M
Abstract
In this paper a theoretical analysis of the R(o)A product and the detectivi ty in a GalnAsSb infrared photovoltaic detector is reported, dependent on t he four fundamental kinds of noise mechanism and the quantum efficiency. Th e considerations are carried out for near room temperature and 2.5 mu m wav elength. The analytical results show that the noise mechanisms can be reduc ed, and correspondingly the performance of such detectors can be improved.