A new simulation model of electron beam lithography for manufacturing

In recent years, compared to optical lithography that has optical limitatio n, electron beam lithography has been applied in delineating selected layer s of Gbit DRAM and VHSIC such as HEMT due to its high resolution. Chemicall y amplified resists (CAR) have been broadly utilized for their high sensiti vity and high resolution. This paper is a study on simulation models and ch aracteristics for electron beam lithography with highly sensitive CAR. We p ropose especially on a general analytic model for the chemical behavior of positive tone resists with typical deprotection chemistries and negative to ne resists with three components resist system. The model covers acid gener ation, diffusion, reaction, soluble possibility in the developer and the de velopment. The edge profiles and performances of resists are analyzed by us ing a simulator and experiments, and the simulation shows a good agreement with the actual process.