Dry cleaning of fluorocarbon residues by low-power electron cyclotron resonance hydrogen plasma

Citation
Sh. Lim et al., Dry cleaning of fluorocarbon residues by low-power electron cyclotron resonance hydrogen plasma, J KOR PHYS, 33, 1998, pp. S108-S111
Citations number
10
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
33
Year of publication
1998
Supplement
S
Pages
S108 - S111
Database
ISI
SICI code
0374-4884(199811)33:<S108:DCOFRB>2.0.ZU;2-9
Abstract
A low-power (50 W) electron cyclotron resonance hydrogen plasma cleaning pr ocess was demonstrated for the removal of fluorocarbon residue layers forme d by reactive ion etching of silicon dioxide. The absence of residue layers was confirmed by in-situ reflection high energy electron diffraction and c ross-sectional high resolution transmission electron microscopy. The ECR hy drogen plasma cleaning was applied to contact cleaning of a contact string structure, resulting in comparable contact resistance arising during by a c onventional contact cleaning procedure. Ion-assisted chemical reaction invo lving reactive atomic hydrogen species generated in the plasma is attribute d for the removal of fluorocarbon residue layers.