Hydrogen plasma effect on aluminum thin films deposition from CVD using dimethylethylamine Alane

To study the effect of pre-treatment of substrates on the deposition behavi or of Al films, the surfaces of TiN and SiO2 substrates were exposed to hyd rogen plasma or Ar plasma before Al deposition. The Al films were deposited by the pyrolysis of dimethylethylamine alane (DMEAA). A uniform Al film wa s deposited by the hydrogen plasma exposure of SiO2 substrate, while island grains were grown due to Ar plasma exposure. The pre-treatments of TiN sub strate did not affect the deposition rate of Al film. The concentration of OH radicals at the SiO2 surface was increased by the hydrogen plasma treatm ent. We suggest that;the OH radicals enhance the adsorption of DMEAA on SiO 2 surface, resulting in the larger number of nucleation sites.