Characteristics of MFSFET considering various parameters of the ferroelectric and inter-dielectric

Various parameters of the metal-ferroelectric-semiconductor field-effect tr ansistor (MFS-FET) were considered for investigating its feasibility to sin gle transistor non-volatile memory. The drain current of MFS-FET was calcul ated by Miller's model in consideration of various parameters such as reman ent polarization, coercive field, dielectric constant of the ferroelectric, as well as inter-dielectric thickness, and dielectric constant of the inte rdielectric. To obtain a hysteretic memory window and a sufficient current driving capability, a thicker ferroelectric with lower dielectric constant and/or a thinner dielectric with higher dielectric constant are required. T he calculated results were compared with the experimental ones of the fabri cated MFS-FET.