Thermally grown thin nitride films as a gate dielectric

High-quality very thin films (less than or equal to 6 nm) of silicon nitrid e were thermally grown in ammonia atmosphere with an IR (Infrared) gold ima ge furnace. As-grown nitride film was analyzed using AES (Auger Emission Sp ectroscopy). Using MIS (Metal-Insulator-Semiconductor) devices, the growth rate was calculated using CV (Capacitance-Voltage) measurements and various electrical characteristics were obtained using CV, IV (Current-Voltage), t rapping, time-dependent breakdown, high-field stress, constant current inje ction stress and dielectric breakdown techniques. These characteristics sho wed that very thin thermal silicon nitride films can be used as gate dielec trics for future highly scaled-down ULSI (Ultra Large Scale Integrated) dev ices, especially for EEPROM (Electrically Erasable and Programmable ROM)'s.