A study on silicon damages and ultra-low energy ion implantation using classical molecular dynamics

We have calculated ultra-low energy silicon-self ion implantations and sili con damages through classical molecular dynamics simulation using empirical potentials. We tested whether the recently developed Environment-Dependent Interatomic Potential (EDIP) was suitable for ultra low ion implantation s imulation, and found that point defects formation energies were in good agr eement with other theoretical calculations, but the calculated vacancy migr ation energy was overestimated. The number of isolated defects that are pro duced by collision cascades are only a few of the total number of defects, and most of the damages are concentrated into amorphous-like pockets.