Integration of high voltage LDMOSFET into a low voltage CMOS for PDP data driver IC

LDMOS (lateral double-diffused MOS) transistors have been fully integrated into a low voltage 1.2 mu m analog CMOS using p(-)-epi on p-type silicon su bstrate to develop PDP (plasma display panel) driver IC in 80 V region. The LDMOS transistor with a drift length of 8.4 mu m and a breakdown voltage o f 120 similar to 140 V was self-isolated to low voltage CMOS ICs. The measu red specific on-resistances of the power devices for n- and p-LDMOSFET were about 4 and 9 m Omega.cm(2), respectively. The PDP data driver fabricated by the developed power IC technology shows a good performance with the outp ut voltage up to 90 V and both rising and falling time below 80 nsec.