3 V 3 mW DC 2.2 GHz wide band amplifier Si MMIC with high Q spiral inductor using polyimide as an insulator

This paper presents ultra low power and wide bandwidth monolithic amplifier with Si MMIC technology using 0.8 mu m BiCMOS process and spiral inductors on Si-substrate. 4 mu m thick aluminum metal and 10 mu m thick polyimide a s an insulator were used for high Q spiral inductor on Si-substrate. Bandwi dth of 2.2 GHz and power consumption of 3mW were achieved using on-wafer me asurement. Chip size is 1.8 mm x 1 mm.