Selective formation of InAs quantum dot structures grown by molecular beamepitaxy

We report on the selective formation of self-assembled quantum dots (QDs) u sing the {111}-facet revealed GaAs substrate and masked substrate by nano p atterned Ga2O3 thin film. Using the {111}-facet revealed substrate, higher migration effect of the In atoms on the {111}-facet compared to the (100) p lane enables the selective formation of InAs QDs. In the case of the masked substrate by Ga2O3 thin film, more effective and easy selective formation of self-assembled QDs could be realized. The selectivity of the QDs growth was obtained successfully using the 0.2 mu m patterned Ga2O3 layer, which r esulted from the enhanced migration effect of the adsorbed In atoms on the Ga2O3 surface as well as the desorption effect.