Growth and structural properties of ZnS/GaAs and ZnS/GaP epilayers by hot-wall epitaxy

Authors
Nam, S",Byungsung,"Lee, KS Choi, YD
Citation
Ks. Nam, S",byungsung,"lee et Yd. Choi, Growth and structural properties of ZnS/GaAs and ZnS/GaP epilayers by hot-wall epitaxy, J KOR PHYS, 33, 1998, pp. S309-S312
Citations number
23
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
33
Year of publication
1998
Supplement
S
Pages
S309 - S312
Database
ISI
SICI code
0374-4884(199811)33:<S309:GASPOZ>2.0.ZU;2-H
Abstract
The structural properties for high quality ZnS epilayers grown on GaAs and GaP substrates by hot-wall epitaxy were investigated. From the FWHM of the double crystal rocking curves (DCRC), ZnS epilayers grown on GaP is found t o be superior in quality. The lattice parameter perpendicular to the interf ace of ZnS/GaP is smaller than that of ZnS/GaAs due to the larger thermal s train. The thickness dependence of the FWHM of the DCRC reveals that the cr itical thickness of ZnS/GaP is about 0.035 mu m.