Epitaxial growth of void free beta-SiC on Si by the pyrolysis of tetramethylsilane

The effects of growth parameters and nitridation of a Si surface have been investigated for the epitaxial growth of void-free SiC films on a Si substr ate. Void-free single crystalline SiC films were grown when the Si substrat e was heated under the how of tetramethysilane (TMS), while voids were obse rved in the Si side of the SiC/Si interface at growth temperatures of above 1000 degrees C. The complete coverage of the Si surface with a SiC layer a t the initial stage of the SiC growth was critical in suppressing the forma tion of the voids. On the other hand, the nitrided Si substrate accommodate d the growth of the void-free SiC film with a smooth and flat film/substrat e interface. The void formation was attributed to the out-diffusion of Si a toms from the Si substrate during the growth process. The mechanism of void formation will be briefly discussed in this work.