A well-defined selective GaAs epilayers were successfully grown on V-groove
d GaAs substrates by single-stage atmospheric pressure metalorganic chemica
l vapor deposition (MOCVD) by supplying carbon tetrabromide (CBr4) and carb
on tetrachloride (CCl4). Inside the V-grooves, the selectively grown GaAs e
pilayers exhibited a triangular and a round shape by supplying CBr4 and CCl
4, respectively. By using this single-stage selective epitaxial growth tech
nique, GaAs/AlGaAs buried channel stripe lasers with a GaAs active layer co
mpletely embedded in AlGaAs barriers were obtained. Room temperature operat
ion was achieved at a wavelength of 869 nm with threshold currents as low a
s 43.5 mA (pulsed) and 59.9 mA (CW) for a 250 mu m-long uncoated cavity.