8x8 vertical-cavity surface-emitting laser array using oxide surface earner

We have demonstrated that an exposed AlAs layer can be seated against furth er wet oxidation and an 8x8 vertical-cavity surface-emitting laser (VCSEL) array was fabricated using the sealing technique. A critical processing ste p consists of the formation of an oxide surface barrier by the first wet ox idation for a short time at 390 similar to 430 degrees C in steam environme nt of previously roam ambient exposed AlAs surface. The best optimum condit ion for sealing AlAs was to form the oxide surface barrier with a thickness of similar to 1 mu m at 408 degrees C for 15 s. Then the buried AlAs layer s were protected against further wet oxidation at 400 degrees C for one hou r. The threshold current of an 8 x 8 VCSEL array ranged from 0.2 to 1.5 mA. This laser array had an average threshold current of 0.46 mA and a standar d deviation of 0.26 mA. The thermal resistance of an element of the array w as about 1.82 degrees C/mW.