Insertion-loss-free InGaAsP/InP LD-gate optical switch arrays

We have proposed and fabricated 1.57 mu m InGaAsP/InP laser amplifier gate 4x4 switch arrays using MOCVD and RIE processes. The designed switch arrays have equivalent bending curve for all 16 paths. We compared the performanc es of waveguide integrated laser diodes with different current blocking lay ers, i.e., Fe-doped InP and p/n/p-doped InP layers. On the whole, Fe-daped InP was better than p/n/p-doped InP as a blocking layer. We obtained very u niform characteristics for all paths. The averaged value of the fiber-to-fi ber gains was 0 dB for TE polarized light at 50 mA gate current, 40 mA pre- amplifier current and 40 mA post-amplifier current.