Citation
Ck. Song et al., Improvement of reliability of GaAs HBT with InGaP ledge emitter structure, J KOR PHYS, 33, 1998, pp. S370-S373
Citations number
12
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884
→ ACNP
Volume
33
Year of publication
1998
Supplement
S
Pages
S370 - S373
Database
ISI
SICI code
0374-4884(199811)33:<S370:IOROGH>2.0.ZU;2-R
Abstract
The self-aligned AlGaAs/GaAs HBTs with the mesa-etched emitter showed sever
e degradation in current gain under stress. The cause was identified to be
due to instability of the surface states on extrinsic base. In this paper,
the surface states were diminished by the hetero-passivation of InGaP ledge
emitter and the reliability was drastically improved. The activation energ
y of current gain degradation was extracted to be 1.97eV and MTTF to be 4.8
x10(8) at 140 degrees C which has satisfied MIL standards.