High speed gain coupled DFB laser diode integrated with MQW electroabsorption modulator

Citation
Mg. Kim et al., High speed gain coupled DFB laser diode integrated with MQW electroabsorption modulator, J KOR PHYS, 33, 1998, pp. S383-S387
Citations number
15
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
33
Year of publication
1998
Supplement
S
Pages
S383 - S387
Database
ISI
SICI code
0374-4884(199811)33:<S383:HSGCDL>2.0.ZU;2-B
Abstract
We have demonstrated stable modulation characteristics of the gain coupled distributed feedback (GC-DFB) laser diode integrated with butt-coupled InGa AsP/InGaAsP strain compensated MQW (multiple-quantum-well) modulator for hi gh speed optical transmission. For this purpose, we have adopted the InGaAs P/InGaAsP strain compensated MQW structure for the EA modulator and n-doped InGaAs absorptive grating for DFB laser. The typical threshold current and slope efficiency were about 15 mA and 0.1 mW/mA, respectively. The extinct ion ratio of fabricated integrated device was about 15 dB at -2 V, and the small signal bandwidth was shown to be around 17 GHz. We also found that th e alpha parameter becomes negative at below a -0.6 V bias voltage. We trans mitted 10 Gbps NRZ electrical signal over 90 km of standard single mode opt ical fiber (SMF). A clearly opened eye diagram was observed in the modulate d output.