Electron holography study of voids in self-annealed implanted silicon

The characterization of defects produced during self-annealing implantation of P+ ions in silicon is of great interest for the realization of good qua lity pn junctions in silicon and to understand the peculiarity of beam-soli d interactions occurring during implantation performed under the conditions of rather high current and power density. High-resolution electron hologra phy is employed here to study the three-dimensional configuration of nanome tre-size voids obtained by P+ ion bombardment of a silicon wafer. Reconstru cted phase difference information has been used to obtain maps in which the phase distribution gives a qualitative topography of the cavity shape as w ell as quantitative measurements of the depth variations.