Fabrication and investigation of YBa2Cu3O7-delta/Ba0.05Sr0.95TiO3 thin film structures for voltage tunable devices

Citation
Ra. Chakalov et al., Fabrication and investigation of YBa2Cu3O7-delta/Ba0.05Sr0.95TiO3 thin film structures for voltage tunable devices, PHYSICA C, 308(3-4), 1998, pp. 279-288
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
308
Issue
3-4
Year of publication
1998
Pages
279 - 288
Database
ISI
SICI code
0921-4534(19981120)308:3-4<279:FAIOYT>2.0.ZU;2-R
Abstract
High-temperature superconducting/ferroelectric thin film structures were de posited by laser ablation. Three types of voltage tunable devices were fabr icated and investigated-trilayer capacitor, planar interdigital capacitor a nd coplanar waveguide. As ferroelectric the solid solution BaxSr1-xTiO3 was chosen with barium content x = 0.05 because its Curie temperature is close to the liquid nitrogen boiling point (77 K). Temperature and voltage depen dences of the Ba0.05Sr0.95TiO3 dielectric constant epsilon(r,BSTO) were stu died. High epsilon(r,BSTO) values were determined-up to 3000 at 75 K, 20 GH z and zero de bias. Efficient voltage tunability was demonstrated (up to 40 %) at loss level tan delta=0.01-0.1. Compact YBa2Cu3O7-delta/Ba0.05Sr0.95Ti O3 coplanar waveguide with as narrow gap as 18 mu m was tested as electrica lly tunable phase-shifter and field-induced phase shifts of more than 180 d egrees were obtained by 35 V de bias at 20 GHz. This improvement was attain ed by proper choice of the ferroelectric material, accomplished epitaxial g rowth of the films and decrease of the specific dimensions. (C) 1998 Publis hed by Elsevier Science B.V. All rights reserved.