Two thermodynamically stable states in SiO- and PN-

Citation
Gl. Gutsev et al., Two thermodynamically stable states in SiO- and PN-, PHYS REV A, 58(6), 1998, pp. 4972-4974
Citations number
26
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW A
ISSN journal
10502947 → ACNP
Volume
58
Issue
6
Year of publication
1998
Pages
4972 - 4974
Database
ISI
SICI code
1050-2947(199812)58:6<4972:TTSSIS>2.0.ZU;2-#
Abstract
In contrast to the well-known CO and N-2 molecules, isoelectronic SiO and P N form thermodynamically stable conventional (valence) and dipole-bound ani on states upon attachment of an extra electron. According to the results of our high-quality nb initio calculations, binding energies of the electron in these states art: 38 and 1.6 meV (SiO-) and 76 and 1.0 meV (PN-), respec tively. Dissociation trends of the SiO- and PN- anions are discussed. [S105 0-2947(98)01312-2].