Observation of the metal-insulator transition in two-dimensional n-type GaAs

Authors
Hanein, Y Shahar, D Yoon, J Li, CC Tsui, DC Shtrikman, H
Citation
Y. Hanein et al., Observation of the metal-insulator transition in two-dimensional n-type GaAs, PHYS REV B, 58(20), 1998, pp. R13338-R13340
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
58
Issue
20
Year of publication
1998
Pages
R13338 - R13340
Database
ISI
SICI code
0163-1829(19981115)58:20<R13338:OOTMTI>2.0.ZU;2-9
Abstract
The observation of a carrier-density driven metal-insulator transition in n -type GaAs-based heterostructure is reported. Although weaker than in compa rable-quality p-type GaAs samples, the main features of the transition are rather similar. [S0163-1829(98)51744-4].