Wm. Chen et al., Similarity between the 0.88-eV photoluminescence in GaN and the electron-capture emission of the O-p donor in GaP, PHYS REV B, 58(20), 1998, pp. R13351-R13354
A striking similarity has been found between the 0.88-eV photoluminescence
(PL) in GaN and the 0.841-eV PL from the substitutional O-p donor in GaP. T
he major localized phonons, regarded as characteristic for local vibrations
involving O-p in GaP, are replicated in the 0.88-eV PL in GaN. This sugges
ts that the 0.88-eV PL can originate from the electronic transition related
to the substitutional O-N donor in GaN, either the isolated O-N or a compl
ex involving O-N Within the first model, the isolated O-N in GaN could be a
deep donor and therefore could not be responsible for the residual n-type
conductivity. [S0163-1829(98)52044-9].