Two-fluid-model analysis of low-temperature thermodynamic data for Si : P

Authors
Citation
C. Kasl et Mjr. Hoch, Two-fluid-model analysis of low-temperature thermodynamic data for Si : P, PHYS REV B, 58(20), 1998, pp. 13510-13519
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
58
Issue
20
Year of publication
1998
Pages
13510 - 13519
Database
ISI
SICI code
0163-1829(19981115)58:20<13510:TAOLTD>2.0.ZU;2-X
Abstract
A derailed analysis of available low-temperature (T less than or equal to 1 K) thermodynamic response-Function data for Si:P in the vicinity of the me tal-insulator transition has been carried out using a two-fluid model which allows for both localized and itinerant electron contributions. This analy sis provides information on the relative concentration of the two electron "fluids" as a function of the concentration through the critical region. Th e specific-heat data, in both zero and nonzero magnetic fields, is successf ully described in terms of this two-fluid model. [S0163-1829(98)00724-3].