Surface Brillouin scattering study of the surface excitations in amorphoussilicon layers produced by ion bombardment

Citation
X. Zhang et al., Surface Brillouin scattering study of the surface excitations in amorphoussilicon layers produced by ion bombardment, PHYS REV B, 58(20), 1998, pp. 13677-13685
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
58
Issue
20
Year of publication
1998
Pages
13677 - 13685
Database
ISI
SICI code
0163-1829(19981115)58:20<13677:SBSSOT>2.0.ZU;2-B
Abstract
Thin amorphous silicon layers on crystalline silicon substrates have been p roduced by argon-ion bombardment of (001) silicon Surfaces. Thermally induc ed surface excitations characteristic of this example of a soft-on-hard sys tem have been investigated by surface Brillouin scattering (SBS) as a funct ion of scattering-angle and amorphous-layer thickness. At large scattering angles or for sufficiently large layer thickness, a second peak is present in the SBS spectrum near the low-energy threshold for the continuum of bulk excitations of the system. The measured spectra are analyzed on the basis of surface elastodynamic Green's functions, which successfully simulate the ir detailed appearance and identify the second peak as either a Sezawa wave (true surface wave) or a pseudo-Sezawa wave (attenuated surface wave) depe nding on the scattering parameters. The attributes of the pseudo-Sezawa wav e are described; these include its asymmetrical Line shape and variation in intensity with k(parallel to)d (the product of the surface excitation wave vector and the layer thickness), and its emergence as the Sezawa wave from the low-energy side of the Lamb shoulder at a critical value of k(parallel to)d. Furthermore, the behavior of a pronounced minimum in the Lamb should er near the longitudinal wave threshold observed in the experiments is repo rted and is found to be in good agreement with the calculated spectra. The elastic constants of the amorphous silicon layer are determined from the ve locity dispersion of the Rayleigh surface acoustic wave and the minimum in the Lamb shoulder. [S0163-1829(98)04039-9].