The epitaxial Bain path for vanadium, calculated by first-principles theory
, reveals the existence of a metastable body-centered-tetragonal (bct) phas
e with cia - 1.78. Experiments aimed at stabilizing this phase by pseudomor
phic epitaxy on a Ni{001} substrate were successful insofar as the ultrathi
n films grown have a bet structure with cia between 1.73 and 1.77. The bulk
structure of the V films was determined by quantitative low-energy electro
n diffraction, but the accuracy of the results is worse than usual owing to
high densities of defects in the grown films. [S0163-1829(98)03044-6].