Disordering of Si(111) at high temperatures

Authors
Hibino, H Sumitomo, K Fukuda, T Homma, Y Ogino, T
Citation
H. Hibino et al., Disordering of Si(111) at high temperatures, PHYS REV B, 58(19), 1998, pp. 12587-12589
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
58
Issue
19
Year of publication
1998
Pages
12587 - 12589
Database
ISI
SICI code
0163-1829(19981115)58:19<12587:DOSAHT>2.0.ZU;2-6
Abstract
Reflection high-energy electron diffraction (RHEED) and medium-energy ion s cattering (MEIS) were used to investigate the disordering of a Si(lll) surf ace at high temperatures. RHEED intensities exhibit a steplike decrease aro und 1470 K during heating. There is a steplike increase in the surface-peak area measured using MEIS around this temperature. These results are consis tent with the formation of a thin layer of positionally disordered atoms at the transition. [S0163-1829(98)05544-1].