Resonant Raman scattering in InP/In0.48Ga0.52P quantum dot structures embedded in a waveguide

Citation
Aa. Sirenko et al., Resonant Raman scattering in InP/In0.48Ga0.52P quantum dot structures embedded in a waveguide, PHYS REV B, 58(19), 1998, pp. 12633-12636
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
58
Issue
19
Year of publication
1998
Pages
12633 - 12636
Database
ISI
SICI code
0163-1829(19981115)58:19<12633:RRSIIQ>2.0.ZU;2-M
Abstract
We report on Raman scattering in nanostructures with InP quantum dots in an In0.48Ga0.52P matrix embedded in an In0.48Al0.52P waveguide. At resonant e xcitation with the quantum dot excitons, broad Raman peaks corresponding to acoustic and optical vibrations were observed. Their polarization was stud ied for in-plane propagation of the exciting and scattered light in forward scattering geometry. In comparison with the conventional backscattering co nfiguration, the Raman signals are drastically enhanced due to the increase d scattering volume. [S0163-1829(98)01643-9].