Charged exciton dynamics in GaAs quantum wells

Citation
G. Finkelstein et al., Charged exciton dynamics in GaAs quantum wells, PHYS REV B, 58(19), 1998, pp. 12637-12640
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
58
Issue
19
Year of publication
1998
Pages
12637 - 12640
Database
ISI
SICI code
0163-1829(19981115)58:19<12637:CEDIGQ>2.0.ZU;2-F
Abstract
We study the dynamics of the charged and neutral excitons in a modulation-d oped GaAs quantum well by time-resolved photoluminescence under a resonant excitation. The radiative lifetime of the charged exciton is found to be su rprisingly short, 60 ps. This time is temperature independent between 2 and 10 K, and increases by a factor of 2 at 6 T. We discuss our findings in vi ew of present theories of exciton radiative decay. [S0163-1829(98)03143-9].