Low-temperature epitaxial growth of beta-SiC by multiple-energy ion implantation

A cubic silicon carbide (beta-SiC) buried layer was synthesized in Si(lll) using a combination of multienergy carbon ion implantation at room temperat ure and post-thermal annealing. The crystal structure and the crystalline q uality of the beta-SiC layer was identified by x-ray diffraction in the the ta-2 theta mode and was examined by pole figure measurement of x-ray diffra ction. Interestingly, by using the multienergy implantation technique, the beta-SiC buried layer showed epitaxial growth at annealing temperatures as low as 400 degrees C. At an annealing temperature of 800 degrees C, the x-r ay pole figures show that the beta-SiC buried layer has a near-perfect epit axial relationship with the silicon substrate. [S0163-1829(98)02843-4].