Surface plasmons at MOCVD-grown GaN(000(1)over-bar)

Citation
Vm. Polyakov et al., Surface plasmons at MOCVD-grown GaN(000(1)over-bar), SEMIC SCI T, 13(12), 1998, pp. 1396-1400
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
13
Issue
12
Year of publication
1998
Pages
1396 - 1400
Database
ISI
SICI code
0268-1242(199812)13:12<1396:SPAMG>2.0.ZU;2-1
Abstract
We report on the first observation of surface plasmons at a GaN surface by high-resolution electron energy loss (HREEL) spectroscopy. Dipole scatterin g theory using self-consistent electron density profiles is employed to cal culate the surface energy loss function and hence the expected energy loss spectra. The characteristic features of both the surface plasmons and the F uchs-Kliewer (FK) surface optical phonons are well reproduced in the framew ork of this model. Fitting measured HREEL spectra allows us to give estimat es of important semiconductor parameters such as electron density, electron mobility and band bending. Moreover, it is found that the plasmon damping strongly depends on primary beam energy. Similarly, the FK phonon damping a nd frequency are also affected by the variation of primary beam energy.