MOS gated Si : SiGe quantum wells formed by anodic oxidation

Authors
Yeoh, JC Green, PW Thornton, TJ Kaya, S Fobelets, K Fernandez, JM
Citation
Jc. Yeoh et al., MOS gated Si : SiGe quantum wells formed by anodic oxidation, SEMIC SCI T, 13(12), 1998, pp. 1442-1445
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
13
Issue
12
Year of publication
1998
Pages
1442 - 1445
Database
ISI
SICI code
0268-1242(199812)13:12<1442:MGS:SQ>2.0.ZU;2-1
Abstract
We have used electrochemical anodic oxidation to form,gate oxides on strain ed n-channel Si:SiGe quantum wells. The oxides are characterized by current -voltage and capacitance-voltage measurements. Comparison of measured and c alculated electron sheet densities in the quantum well. indicates that the oxide growth does not cause degradation of the Si:SiGe material. This is co nfirmed by low-temperature measurements of the electron mobility and sheet density in the quantum well.