Poly-3-methylthiophene/CuInSe2 solar cell formed by electrodeposition and processing

CuInSe2 (CIS) thin films were electrodeposited and characterized for photov oltaic applications. As-deposited and selenized films exhibited different k inds of morphology. The conductivity type, carrier concentration and flat-b and potential were determined from photoelectrochemical studies. Schottky b arrier type photovoltaic junctions were formed by using a heavily doped PMe T (poly-3-methylthiophene, displaying nearly metallic behaviour) prepared b y electropolymerization, and CIS obtained by electrodeposition. The photovo ltaic structure formed and studied was an Mo/CIS/PMeT/grid Schottky barrier junction. A corrected solar to electrical conversion efficiency of 1.4% wa s obtained in the case of the PMeT/CIS junction.