Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux

Authors
Foxon, CT Hooper, SE Cheng, TS Orton, JW Ren, GB Ber, BY Merkulov, AV Novikov, SV Tret'yakov, VV
Citation
Ct. Foxon et al., Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux, SEMIC SCI T, 13(12), 1998, pp. 1469-1471
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
13
Issue
12
Year of publication
1998
Pages
1469 - 1471
Database
ISI
SICI code
0268-1242(199812)13:12<1469:IOTPFG>2.0.ZU;2-6
Abstract
The effect of using an indium flux during the MBE growth of GaN layers was investigated. The properties of these layers were studied using electron pr obe microanalysis, secondary ion mass spectroscopy, photoluminescence and c athodoluminescence. The optical properties of the GaN layers are shown to i mprove as compared with undoped GaN layers grown under nominally the same c onditions but without an additional indium flux.