Study of the dynamical characteristics of an insulator-semiconductor interface

A study of charge relaxation processes in metal-insulator-semiconductor str uctures containing the rare-earth oxides Gd2O3 and Lu2O3 as the insulator h as been performed using the deep-level transient spectroscopy (DLTS) method in combination with a study of nonlinear oscillations in the metal-insulat or-semiconductor structure connected to an external inductive circuit. On t he basis of the DLTS results and the variation with temperature of the conf iguration of the period multiplicity regions of the controlling parameters (the amplitude and frequency of the applied voltage) it is shown that the g eneration of nonlinear oscillations in a metal-insulator-semiconductor stru cture is governed by the properties of the insulator-semiconductor interfac e, in particular, the density of surface states and the capture cross secti ons. (C) 1998 American Institute of Physics. [S1063-7826(98)01111-9].