Electrical characteristics of silicon-rare-earth fluoride layered switching structures

Authors
Rozhkov, VA Shalimova, MB
Citation
Va. Rozhkov et Mb. Shalimova, Electrical characteristics of silicon-rare-earth fluoride layered switching structures, SEMICONDUCT, 32(11), 1998, pp. 1201-1205
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
32
Issue
11
Year of publication
1998
Pages
1201 - 1205
Database
ISI
SICI code
1063-7826(199811)32:11<1201:ECOSFL>2.0.ZU;2-H
Abstract
Switching and memory effects in the electrical conductance of layered struc tures based on rare-earth fluorides are investigated. These investigations reveal the existence of high- and low-resistance states in structures of me tal-insulator-semiconductor type. It is shown that the characteristics of t he low-resistance state of such structures are described by a metal-tunneli ng insulator-semiconductor model. (C) 1998 American Institute of Physics. [ S1063-7826(98)01311-8].