Study of GaN thin layers subjected to high-temperature rapid thermal annealing (vol 32, pg 1048, 1998)

Authors
Katsavets, NI Laws, GM Harrison, I Larkins, EC Benson, TM Cheng, TS Foxon, CT
Citation
Ni. Katsavets et al., Study of GaN thin layers subjected to high-temperature rapid thermal annealing (vol 32, pg 1048, 1998), SEMICONDUCT, 32(11), 1998, pp. 1256-1256
Citations number
1
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
32
Issue
11
Year of publication
1998
Pages
1256 - 1256
Database
ISI
SICI code
1063-7826(199811)32:11<1256:SOGTLS>2.0.ZU;2-#