A Monte Carlo computer simulation code has been developed to describe the b
ehavior of incident particles and the growth of (TiMo) N films in the multi
component ion beam enhanced deposition process, which combines bombardment
with a multicomponent ion beam of N+ + Mo+ and sputter deposition of a Ti f
ilm. The him composition profile and intermixed layer between the substrate
and the film were studied using a computer simulation method. It is shown
that Mo ion implantation has a stronger mixing effect in the film-substrate
interface than does N ion implantation. The N profile of the computer simu
lation conforms to that of the Auger electron spectroscopy results. (C) 199
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