MoO3-Bi2O3 thin films are grown by CVD on SiO2/Si(100) and Al2O3 using BiPh
3 and MoO2(dpm)(2) as precursors. The composition, microstructure and morph
ology of the samples can be suitably controlled by the proper combination o
f synthesis and thermal treatment conditions. The chemical characterization
of the obtained films is carried out by XPS and FTIR, while the microstruc
ture and surface morphology are investigated respectively by XRD and AFM. P
reliminary measurements on Bi-doped MoO3 films indicate that they could be
used for the detection of scarcely reducing gases. (C) Published by 1998 El
sevier Science S.A. All rights reserved.