FT-Raman studies of charged defects created on methyl end-capped oligothiophenes by doping with NOBF4

Authors
Casado, J Hernandez, V Hotta, S Navarrete, JTL
Citation
J. Casado et al., FT-Raman studies of charged defects created on methyl end-capped oligothiophenes by doping with NOBF4, ADVAN MATER, 10(17), 1998, pp. 1458-1461
Citations number
27
Categorie Soggetti
Multidisciplinary,"Material Science & Engineering
Journal title
ADVANCED MATERIALS
ISSN journal
09359648 → ACNP
Volume
10
Issue
17
Year of publication
1998
Pages
1458 - 1461
Database
ISI
SICI code
0935-9648(199812)10:17<1458:FSOCDC>2.0.ZU;2-4