Field effect transistors with an organic material as active layer are at pr
esent essentially used to determine the mobilities in these materials, Unti
l now, in analysing the measured current characteristics, only the simplest
(Shockley) model has been used which accounts neither for this type of thi
n film transistor (TFT), which operates in depletion and accumulation, nor
for the nature of the carriers, Starting from two-dimensional simulations f
or the analogous silicon TFT, we have developed an analytical model for the
TFT that accounts for several peculiarities of the current characteristics
of this type of transistor. In addition, a first modification has been dev
eloped which describes the situation when the charged states are polarons a
nd bipolarons, as is the case in organic materials. Applications to publish
ed experimental current characteristics show that a general reanalysis is n
eeded. (C) 1998 John Wiley & Sons, Ltd.