ATOMISTIC PROCESSES IN THE EARLY STAGES OF THIN-FILM GROWTH

Growth of thin films from atoms deposited from the gas phase is intrin sically a non-equilibrium phenomenon governed by a competition between kinetics and thermodynamics. Precise control of the growth and thus o f the properties of deposited films becomes possible only after an und erstanding of this competition is achieved. Here, the atomic nature of the most important kinetic mechanisms of film growth is explored. The se mechanisms include adatom diffusion on terraces, along steps, and a round island corners; nucleation and dynamics of the stable nucleus; a tom attachment to and detachment from terraces and islands; and interl ayer mass transport. Ways to manipulate the growth kinetics in order t o select a desired growth mode are briefly addressed.