An application of the apertureless scanning near-field optical microscopy:imaging a GaAlAs laser diode in operation

The imaging of a commercial GaAlAs semiconductor laser emitting at 0.78 mu m has been performed by apertureless scanning near-field optical microscopy using a sharp metallic tip. This tip was used as an optical and force prob e simultaneously. In stimulated emission, we observed the single transverse laser mode whose dimensions are in good agreement with theoretical results . In spontaneous emission, an optical contrast linked to the known laser la yers structure was observed. (C) 1998 American Institute of Physics. [S0003 -6951(98)02349-3].